Array substrate, display device having the same, and manufacturing method thereof

ABSTRACT

The present application discloses an array substrate comprising an active layer; and a plurality of touch electrodes in a same layer as the active layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a national stage application under 35 U.S.C. § 371of International Application No. PCT/CN2015/097027 filed Dec. 10, 2015,which claims priority to Chinese Patent Application No. 201510246822.2,filed May 14, 2015, the contents of which are incorporated by referencein the entirety.

FIELD

The present invention relates to display technology, more particularly,to an array substrate, a display device having the same, and amanufacturing method thereof.

BACKGROUND

Conventional touch control display panels typically use indium tin oxide(ITO) as the touch electrode material. For large size display, there aresome issues with indium tin oxide touch electrodes. Because indium tinoxide has a relatively large resistance, a larger size displayinevitably demands an ITO touch electrode having a relatively largerthickness, which results in a lower light transmission rate. Thus, it isdifficult to use ITO as the touch electrode material in a large sizedisplay panel.

SUMMARY

In one aspect, the present invention provides an array substratecomprising an active layer and a plurality of touch electrodes in a samelayer as the active layer.

Optionally, the active layer comprises a semi-conductive material, andthe plurality of touch electrodes comprise a conductive material, theconductive material comprises at least one element in common with thesemi-conductive material.

Optionally, the conductive material is converted from thesemi-conductive material by a plasma treatment, and patternscorresponding to the active layer and the plurality of touch electrodesare formed in a single process.

Optionally, the active layer comprises a metal oxide semi-conductivematerial, the plurality of touch electrodes comprise a reductiveplasma-treated metal oxide semi-conductive material.

Optionally, the metal oxide semi-conductive material comprises indiumgallium zinc oxide.

Optionally, the plurality of touch electrodes comprise a H₂ or NH₃plasma-treated indium gallium zinc oxide.

Optionally, the plurality of touch electrodes comprise a conductivematerial, and the active layer comprises a semi-conductive materialconverted from the conductive material by a plasma treatment.

Optionally, the plurality of touch electrodes comprise a metal, and theactive layer comprises an oxidative plasma-treated metal material.

Optionally, the plurality of touch electrodes comprises a plurality rowsof first touch electrodes and a plurality of second touch electrodes,each of the plurality rows of first touch electrodes extendssubstantially along a first direction and comprises a plurality of firsttouch electrodes spaced apart along the first direction; each of theplurality of second touch electrodes extends substantially along asecond direction.

Optionally, the array substrate further comprises a first passivationlayer above the active layer; and a plurality of first touch electrodeconnection lines on a side of the first passivation layer distal to theactive layer, each of the plurality of first touch electrode connectionlines extends substantially along the first direction.

Optionally, each of the plurality of first touch electrode connectionlines is connected to the plurality of first touch electrodes in each ofthe plurality rows of first touch electrodes through a plurality ofthird vias in the first passivation layer.

Optionally, the array substrate further comprises a second passivationlayer on a side of the first passivation layer distal to the activelayer; and a pixel electrode on a side of the second passivation layerdistal to the active layer.

Optionally, the pixel electrode is connected to the drain electrodethrough a fourth via in the first passivation layer and a fifth via inthe second passivation layer.

Optionally, the array substrate further comprises a common electrode ona side of the pixel electrode distal to the active layer; a first commonelectrode connection line connected to the common electrode, a secondcommon electrode connection line connected to the plurality rows offirst touch electrodes, and a third common electrode connection lineconnected to the plurality of second touch electrodes; and a firstswitch in the second common electrode connection line and a secondswitch in the third common electrode connection line.

Optionally, the array substrate further comprises an etch stop layer ona side of the active layer proximal to the first passivation layer; anda source electrode and a drain electrode on a side of the etch stoplayer distal to the active layer; the source electrode connected to theactive layer through a first via in the etch stop layer, the drainelectrode connected to the active layer through a second via in the etchstop layer.

Optionally, the plurality of touch electrodes are operated in atime-division driving mode.

In another aspect, the present invention provides a display devicecomprising an array substrate described herein.

In another aspect, the present invention provides a method ofmanufacturing an array substrate, comprising forming a semi-conductivematerial layer; etching the semi-conductive material layer to form anactive layer region and a touch electrode region; and treating the touchelectrode region thereby forming a plurality of touch electrodes.

Optionally, the method further comprises coating a photoresist layer onthe semi-conductive material layer; exposing the photoresist layer witha gray-tone mask plate or a half-tone mask plate; developing the exposedphotoresist layer to obtain a photoresist pattern comprising a firstsection corresponding to the active layer region, second sectioncorresponding to the touch electrode region, and a third section whichis outside the first section and the second section; the depth of firstsection is larger than that of the second section, the photoresist layeris removed in the third section; etching the semi-conductive materiallayer in the third section; ashing the photoresist layer to remove thephotoresist layer in the second section while maintaining thephotoresist layer in the third section; and removing the photoresistlayer in the first section after the step of treating the touchelectrode region.

Optionally, the semi-conductive material comprises a metal oxidesemi-conductive material, and the treating comprises a reductiveplasma-treatment.

Optionally, the semi-conductive material comprises indium gallium zincoxide.

Optionally, the treating step comprises a plasma treatment with H₂ orNH₃.

Optionally, the touch electrode region comprises a plurality rows offirst touch electrode blocks and a plurality of second touch electrodeblocks, each of the plurality rows of first touch electrode blocksextends substantially along a first direction and comprises a pluralityof first touch electrode blocks spaced apart along the first direction;each of the plurality of second touch electrode blocks extendssubstantially along a second direction; and the plurality of touchelectrodes comprises a plurality rows of first touch electrodes and aplurality of second touch electrodes, each of the plurality rows offirst touch electrodes extends substantially along the first directionand comprises a plurality of first touch electrodes spaced apart alongthe first direction; each of the plurality of second touch electrodesextends substantially along the second direction.

Optionally, the method further comprises forming a first passivationlayer above the active layer; forming a plurality of third vias in thefirst passivation layer; and forming a plurality of first touchelectrode connection lines on a side of the first passivation layerdistal to the active layer.

Optionally, each of the plurality of first touch electrode connectionlines extends substantially along the first direction, and each of theplurality of first touch electrode connection lines is connected to theplurality of first touch electrodes in each of the plurality rows offirst touch electrodes through the plurality of third vias.

Optionally, the method further comprises forming a fourth via in thefirst passivation layer; forming a second passivation layer on a side ofthe first passivation layer distal to the active layer; forming a fifthvia in the second passivation layer; and forming a pixel electrode on aside of the second passivation layer distal to the active layer, whereinthe pixel electrode is connected to the drain electrode through thefourth via and the fifth via.

Optionally, the method further comprises forming an etch stop layer on aside of the active layer proximal to the first passivation layer;forming a first via and a second via in the etch stop layer; and forminga source electrode and a drain electrode on a side of the etch stoplayer distal to the active layer, the source electrode is connected tothe active layer through the first via, and the drain electrode isconnected to the active layer through the second via.

Optionally, the method further comprises forming a common electrode on aside of the pixel electrode distal to the active layer; forming a firstcommon electrode connection line connected to the common electrode,forming a second common electrode connection line connected to theplurality rows of first touch electrodes, and forming a third commonelectrode connection line connected to the plurality of second touchelectrodes; and forming a first switch in the second common electrodeconnection line and forming a second switch in the third commonelectrode connection line.

BRIEF DESCRIPTION OF THE FIGURES

The following drawings are merely examples for illustrative purposesaccording to various disclosed embodiments and are not intended to limitthe scope of the present invention.

FIGS. 1-2 are diagrams illustrating the working principle of aconventional touch substrate.

FIG. 3 is a diagram illustrating the structure of a touch substrate insome embodiments.

FIG. 4 is a cross-sectional view along the A-A′ direction of the touchsubstrate in FIG. 3.

FIG. 5 is a cross-sectional view along the B-B′ direction of the touchsubstrate in FIG. 3.

FIG. 6 illustrates the relationship between a signal input by asynchronization signal line and signals on the first touch controlelectrode and the second touch control electrode.

FIG. 7 is a flow chart illustrating a method of manufacturing a touchsubstrate in some embodiments.

FIGS. 8-15 illustrate a method of manufacturing a touch substrate insome embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The disclosure will now describe more specifically with reference to thefollowing embodiments. It is to be noted that the following descriptionsof some embodiments are presented herein for purpose of illustration anddescription only. It is not intended to be exhaustive or to be limitedto the precise form disclosed.

Conventional touch control devices may use on-cell touch controltechnology or in-cell touch control technology. FIGS. 1 and 2 arediagrams illustrating the working principle of a conventional in-celltouch substrate. As shown in FIG. 1, a pulse signal is input into eachcolumn of first touch electrodes while the other columns are connectedto ground. As shown in FIG. 2, each row of second touch electrodes ischecked for capacitance change. The cross-point of a column of firstelectrodes and a row of second electrodes having capacitance change isdetermined to be a touch point. Separate patterning processes arerequired for forming the touch electrodes in the conventional touchsubstrates. The embodiments of the present disclosure provide a touchsubstrate having superior electronic properties and significantlysimplified manufacturing process.

FIG. 3 is a diagram illustrating the structure of a touch substrate insome embodiments. FIG. 4 is a cross-sectional view along the A-A′direction of the touch substrate in FIG. 3. Referring to FIGS. 3 and 4,the array substrate in the embodiment includes an active layer 2, and aplurality of touch electrodes in a same layer as the active layer 2. Theplurality of touch electrodes in the embodiment include a pluralityfirst touch electrodes 3 and a plurality of second touch electrodes 4.For example, the array substrate in the embodiment includes an activelayer 2, and a plurality rows of first touch electrodes 3 and aplurality of second touch electrodes 4 in a same layer as the activelayer 2. As illustrated in FIG. 3, each row of first touch electrodes 3extends substantially along a first direction (e.g., the row directionin FIG. 3). Each tow of first touch electrodes 3 includes a plurality offirst touch electrodes 3 spaced apart along the first direction. In FIG.3, each second touch electrodes 4 extends substantially along a seconddirection (e.g., the column direction in FIG. 3). Optionally, the firsttouch electrode 3 is a sensing electrode (R_(x)). Optionally, the secondtouch electrode 4 is a scanning electrode (T_(x)).

Having the touch electrodes in a same layer as the active layer 2obviates the separate patterning processes for forming the touchelectrodes. It also reduces the thickness of the touch controlstructure. The manufacturing process is much simplified and theelectronic properties of the touch control panel are significantlyimproved.

Referring to FIG. 3, the array substrate in the embodiment also includesa plurality of gate lines 12 connected to the gate electrodes, aplurality of data lines 13 connected to the source electrodes 6. Theplurality of gate lines 12 and the plurality of data lines 13 define aplurality of pixel units.

In some embodiments, the active layer 2 includes a semi-conductivematerial, and the plurality of touch electrodes (e.g., the plurality offirst touch electrodes and the plurality of second touch electrodes)include a conductive material converted from the semi-conductivematerial by a plasma treatment.

In some embodiments, the active layer 2 includes a metal oxidesemiconductor material. Various metal oxide semiconductor material maybe used for making the active layer 2. For example, the active layer 2can be made of indium gallium zinc oxide (IGZO). IGZO is anon-crystalline oxide material containing indium, gallium, and zinc,having a charge carrier mobility around 20-30 times that of anon-crystalline silicone. Using a metal oxide material such as IGZOgreatly enhances the charge/discharge rate of the pixel electrode,increases the response rate of the pixel electrode, and achieving afaster refresh rate. Higher response rate also leads to a dramaticallyincreased pixel scan rate, enabling ultra-high resolution in thin filmtransistor liquid crystal display.

Metal oxide materials such as IGZO have superior semiconductorproperties suitable for making the active layer 2. Moreover, they can beconverted into conductive material by certain treatments such as aplasma treatment. Optionally, the treatment is a reductive plasmatreatment. As conductive materials, they are suitable for making touchelectrodes such as the first touch electrodes 3 and the second touchelectrodes 4. Accordingly, in some embodiments, the plurality of touchelectrodes (e.g., the plurality of first touch electrodes 3 and theplurality of second touch electrodes 4) include a reductiveplasma-treated metal oxide semiconductor material. Optionally, theplasma treatment includes a plasma treatment using H₂, NH₃, or NO₂.Optionally, the active layer 2 includes indium gallium zinc oxide, andthe plurality of touch electrodes include a H₂ or NH₃ plasma-treatedIGZO.

In some embodiments, the plurality of touch electrodes include aconductive material (e.g., a single metal or an alloy), and the activelayer includes a semi-conductive material converted from the conductivematerial by a plasma treatment (e.g., an oxidative plasma treatment).

Referring to FIG. 4, the array substrate in the embodiment includes agate insulating layer 1 on the base substrate. The active layer 2 is ona side of the gate insulating layer 1 distal to the base substrate. Thegate electrode is on a side of the gate insulating layer 1 proximal tothe base substrate. Various materials may be used for making the gateelectrode, including, but are not limited to, aluminum, molybdenum,aluminum Neodymium (AlNd), copper, molybdenum Niobium (MoNb), and alloysthereof. Various materials may be used for making the gate insulatinglayer 1, including, but are not limited to, silicon oxide, siliconnitride, and silicon nitride oxide. Optionally, the gate insulatinglayer 1 has a thickness of around 3000 Å to around 5000 Å. Optionally,the active layer 2 has a thickness of around 400 Å to around 700 Å.

In some embodiments, the array substrate in the embodiment furtherincludes an etch stop layer 5 on a side of the active layer 2 distal tothe base substrate. Various materials may be used for making the etchstop layer 5, including, but are not limited to, silicon oxide.Optionally, the etch stop layer 5 has a thickness of around 1000 Å.

Referring to FIG. 4, the etch stop layer 5 in the embodiment has a firstvia and a second via in the area above the active layer 2. The arraysubstrate includes a source electrode 6 and a drain electrode 7 on aside of the etch stop layer 5 distal to the active layer 2. The sourceelectrode 6 is connected to the active layer 2 through a first via inthe etch stop layer 5. The drain electrode 7 is connected to the activelayer 2 through a second via in the etch stop layer 5. Various materialsmay be used for making the source electrode 6 and the drain electrode 7,including, but are not limited to, aluminum, molybdenum, aluminumNeodymium (AlNd), copper, molybdenum Niobium (MoNb), and alloys thereof.

FIG. 5 is a cross-sectional view along the B-B′ direction of the touchsubstrate in FIG. 3. Referring to FIG. 5, the array substrate in theembodiment further includes a first passivation layer 8 on a side of theetch stop layer 5 distal to the active layer 2. Various materials may beused for making the first passivation layer 8, including, but are notlimited to, silicon oxide. Optionally, the first passivation layer 8 hasa thickness of around 1500 Å to around 2000 Å.

In some embodiments, the first passivation layer 8 has a plurality ofthird vias 14 in the area corresponding to the first touch electrode 3.Specially, the array substrate further includes a plurality of firsttouch electrode connection lines 9 on a side of the first passivationlayer 8 distal to the active layer 2. Each of the plurality of firsttouch electrode connection lines 9 extends substantially along the firstdirection (e.g., the row direction in FIG. 3). Each of the plurality offirst touch electrode connection lines 9 is connected to the pluralityof first touch electrodes 3 in each of the plurality rows of first touchelectrodes 3 through a plurality of third vias 14 in the firstpassivation layer 8.

In some embodiments, the first touch electrodes 3 and the second touchelectrodes 4 are spaced apart and alternately arranged, e.g., along thefirst direction. The second touch electrodes 4 extend continuously alongthe second direction (e.g., the column direction in FIG. 3). Each row ofthe first touch electrodes 3 along the first direction includes aplurality of independent and spaced-apart first touch electrodes 3connected together through the first touch electrode connection lines 9.

The number and density of the first touch electrodes 3 and the secondtouch electrodes 4 in the array substrate may be varied depending onseveral factors such as the size of the display panel. Typically, thetouch electrodes are much larger than the pixels in size. In a typicaldisplay panel, for every dozens to hundreds of pixels, one row of firsttouch electrode 3 and one second touch electrode 4 may be disposed.

In some embodiments, the array substrate further includes a secondpassivation layer 10 on a side of the first passivation layer 8 distalto the active layer 2. Various materials may be used for making thesecond passivation layer 10, including, but are not limited to, siliconoxide. Optionally, the second passivation layer 10 has a thickness ofaround 1500 Å to around 2000 Å.

In some embodiments, the first passivation layer 8 has a plurality offourth vias 14 in the area corresponding to the drain electrode 7, andthe second passivation layer 10 has a plurality of fifth vias 15 in thearea corresponding to the drain electrode 7. Specifically, the arraysubstrate further includes a pixel electrode 11 on a side of the secondpassivation layer 10 distal to the active layer 2. The pixel electrode11 is connected to the drain electrode 7 through a fourth via 14 in thefirst passivation layer 8 and a fifth via 15 in the second passivationlayer 10.

In some embodiments, the touch electrodes (e.g., one or both of thefirst touch electrode and the second touch electrode) are operated in atime-division driving mode. For example, the first touch electrodes 3and the second touch electrodes 4 can be used as common electrodes uponreceiving a common voltage during display mode.

FIG. 6 illustrates the relationship between a signal input by asynchronization signal line and signals on the first touch controlelectrode and the second touch control electrode. Referring to FIG. 6,the first touch electrodes 3 and the second touch electrodes 4 can beused for conducting touch signals in touch control mode, or for applyingcommon voltage in display mode. Thus, in touch control mode, the firsttouch electrodes 3 and/or the second touch electrodes 4 are used astouch electrodes. In display mode, they can be used as commonelectrodes. In addition to the main common electrodes in the arraysubstrate, the touch electrodes (e.g., the first touch electrodes 3and/or the second touch electrodes 4) may also be used as commonelectrodes for driving liquid crystal in certain areas of the displaypanel. The common electrode structure can thus be simplified.

In some embodiments, the array substrate further includes a commonelectrode on a side of the pixel electrode 11 distal to the active layer2. A first common electrode connection line is connected to the commonelectrode. A second common electrode connection line is connected to thefirst touch electrode 3. A third common electrode connection line isconnected to the second touch electrode 4. Optionally, the arraysubstrate further includes a first switch in the second common electrodeconnection line and a second switch in the third common electrodeconnection line.

In another aspect, the present disclosure also provides a method ofmanufacturing an array substrate. FIG. 7 is a flow chart illustrating amethod of manufacturing a touch substrate in some embodiments. FIGS.8-15 illustrate a method of manufacturing a touch substrate in someembodiments. Referring to FIGS. 7-15, the method in the embodimentincludes forming a semi-conductive material layer, etching thesemi-conductive material layer to form an active layer region and atouch electrode region, and treating the touch electrode region therebyforming a plurality of touch electrodes.

In some embodiments, the first material is a semi-conductive material.The method includes forming a semiconductor layer (FIG. 8); etching thesemiconductor layer to form an active layer 2, a first touch electroderegion and a second touch electrode region (FIG. 9); treating the firsttouch electrode region to form a plurality of first touch electrodes 3,and treating the second touch electrode region to form a plurality ofsecond touch electrodes 4 (FIG. 10).

In some embodiments, the active layer 2 is protected when the touchelectrode region is treated to form the touch electrodes. Variousembodiments can be practiced to protect the active layer 2. In someembodiments, the method uses a photoresist layer to protect the activelayer 2. Optionally, the method further includes coating a photoresistlayer on the semi-conductive material layer, and exposing thephotoresist layer with a gray-tone mask plate or a half-tone mask plate.After the exposure, the exposed photoresist layer is developed to obtaina photoresist pattern comprising a first section corresponding to theactive layer region, second section corresponding to the touch electroderegion, and a third section which is outside the first section and thesecond section. The depth of first section is larger than that of thesecond section, the photoresist layer is removed in the third section.Optionally, the method further includes etching the semi-conductivematerial layer in the third section, and ashing the photoresist layer toremove the photoresist layer in the second section while maintaining thephotoresist layer in the third section. After the touch electrode regionis treated to form the touch electrodes, the photoresist layer in thefirst section is then removed, exposing the active layer 2.

In some embodiments, the semi-conductive material includes a metal oxidesemi-conductive material such as indium gallium zinc oxide. In someembodiments, the touch electrode region is treated with a reductiveplasma. Optionally, the reductive plasma is a hydrogen-containingplasma, e.g., H₂, NH₃, or NO₂ plasma.

In some embodiments, the touch electrode region includes a pluralityrows of first touch electrode blocks and a plurality of second touchelectrode blocks. Each of the plurality rows of first touch electrodeblocks extends substantially along a first direction. Each row of thefirst touch electrode blocks includes a plurality of first touchelectrode blocks spaced apart along the first direction. Each of theplurality of second touch electrode blocks extends substantially along asecond direction. The plurality of first touch electrodes 3 and theplurality of second touch electrodes 4 are formed after the treatingsteps discussed above. Optionally, the plurality of first touchelectrodes 3 includes a plurality of rows of first touch electrodes 3.Each of the plurality rows of first touch electrodes 3 extendssubstantially along the first direction. Each row of the first touchelectrodes 3 includes a plurality of first touch electrodes 3 spacedapart along the first direction. Each of the plurality of second touchelectrodes 4 extends substantially along the second direction.

In some embodiments, the method further includes forming a gateinsulating layer 1 above the active layer 2.

In some embodiments, the method further includes forming an etch stoplayer 5 above the active layer 2, forming a first via and a second viain the etch stop layer 5 (FIG. 11), and forming a source electrode 6 anda drain electrode 7 on a side of the etch stop layer 5 distal to theactive layer 2 (FIG. 12). The source electrode 6 is connected to theactive layer 2 through the first via. The drain electrode 7 is connectedto the active layer 2 through the second via.

In some embodiments, the method further includes forming a firstpassivation layer 8 on a side of the etch stop layer 5 distal to theactive layer 2 (FIG. 13); forming a plurality of third vias 14 in thefirst passivation layer 8 (FIG. 13); forming a plurality of first touchelectrode connection lines 9 on a side of the first passivation layer 8distal to the active layer 2 (FIG. 14). Each of the plurality of firsttouch electrode connection lines 9 extends substantially along the firstdirection. Each of the plurality of first touch electrode connectionlines 9 is connected to the plurality of first touch electrodes 3 ineach of the plurality rows of first touch electrodes 3 through theplurality of third vias 14.

In some embodiments, the method further includes forming a fourth via inthe first passivation layer 8; forming a second passivation layer 10 ona side of the first passivation layer 8 distal to the active layer 2;forming a fifth via in the second passivation layer 10; and forming apixel electrode 11 on a side of the second passivation layer 10 distalto the active layer 2. The pixel electrode 11 is connected to the drainelectrode 7 through the fourth via and the fifth via.

In some embodiments, the method further includes forming a commonelectrode on a side of the pixel electrode 11 distal to the active layer2; forming a first common electrode connection line connected to thecommon electrode, forming a second common electrode connection lineconnected to the first touch electrode 3, and forming a third commonelectrode connection line connected to the second touch electrode 4.Optionally, the method also includes forming a first switch in thesecond common electrode connection line and/or forming a second switchin the third common electrode connection line. During display mode, thefirst switch and the second switch are configured to receiving commonvoltage, and the first touch electrode 3 and the second touch electrode4 may be used as common electrodes in certain areas of the displaypanel.

The method described herein may use any appropriate techniques. Forexample, layers can be formed by vapor deposition or sputtering. Thevarious components may be patterned by, e.g., an etching process.

As discussed above, in conventional touch control devices, a separatepatterning process is required for forming the touch electrodes in theconventional touch substrates. The embodiments of the present disclosureprovide a touch substrate having superior electronic properties and muchsimplified manufacturing process. By having the touch electrodes (e.g.,the first touch electrodes 3 and the second touch electrodes 4) in asame layer as the active layer 2, it obviates a separate patterningprocess for forming the first touch electrodes 3 and/or the second touchelectrodes 4. It also reduces the thickness of the touch controlstructure. The manufacturing process is much simplified and theelectronic properties of the touch control panel are significantlyimproved.

The touch control devices as described herein can be a self-capacitivetouch control device or a mutual capacitive touch control device. Amutual capacitive touch control device includes a plurality of touchsensing electrodes and a plurality of touch scanning electrodes (e.g., aplurality of first touch electrodes and a plurality of second touchelectrodes). A self-capacitive touch control device does not require atouch scanning electrode, i.e., the touch sensing electrodes can achievethe touch control function alone.

In another aspect, the present disclosure further provides a displaydevice having an array substrate described herein or manufactured by amethod described herein. The display device may be of any type,including, but are not limited to, an electronic paper, a mobile phone,a tablet computer, a notebook computer, a digital picture frame, anavigation system, etc.

The foregoing description of the embodiments of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formor to exemplary embodiments disclosed. Accordingly, the foregoingdescription should be regarded as illustrative rather than restrictive.Obviously, many modifications and variations will be apparent topractitioners skilled in this art. The embodiments are chosen anddescribed in order to best explain the principles of the invention andits best mode practical application, thereby to enable persons skilledin the art to understand the invention for various embodiments and withvarious modifications as are suited to the particular use orimplementation contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto and their equivalentsin which all terms are meant in their broadest reasonable sense unlessotherwise indicated. Therefore, the term “the invention”, “the presentinvention” or the like does not necessarily limit the claim scope to aspecific embodiment, and the reference to exemplary embodiments of theinvention does not imply a limitation on the invention, and no suchlimitation is to be inferred. The invention is limited only by thespirit and scope of the appended claims. Moreover, these claims mayrefer to use “first”, “second”, etc. following with noun or element.Such terms should be understood as a nomenclature and should not beconstrued as giving the limitation on the number of the elementsmodified by such nomenclature unless specific number has been given. Anyadvantages and benefits described may not apply to all embodiments ofthe invention. It should be appreciated that variations may be made inthe embodiments described by persons skilled in the art withoutdeparting from the scope of the present invention as defined by thefollowing claims. Moreover, no element and component in the presentdisclosure is intended to be dedicated to the public regardless ofwhether the element or component is explicitly recited in the followingclaims.

What is claimed is:
 1. An array substrate, comprising: a base substrate;an active layer; a plurality of touch electrodes configured to detect atouch, the plurality of touch electrodes being in a same layer as theactive layer; a gate electrode in a layer different from the activelayer and the plurality of touch electrode; a pixel electrode; aplurality of touch electrode connection lines, each of whichelectrically connected to one of the plurality of touch electrodes; anda passivation layer on a side of the active layer and the plurality oftouch electrode distal to the base substrate; wherein the active layercomprises a semi-conductive material, and the plurality of touchelectrodes comprise a conductive material, the conductive materialcomprises at least one element in common with the semi-conductivematerial; an orthographic projection of the active layer on the basesubstrate is substantially non-overlapping with orthographic projectionsof the plurality of touch electrodes on the base substrate, and at leastpartially overlaps with an orthographic projection of the gate electrodeon the base substrate; the orthographic projection of the gate electrodeon the base substrate is substantially non-overlapping with theorthographic projections of the plurality of touch electrodes on thebase substrate; and the active layer and the plurality of touchelectrodes are in direct contact with a same insulating layer, withoutany intermediate structure, on a same side of the same insulating layerfacing the passivation layer.
 2. The array substrate of claim 1, whereinthe active layer comprises a metal oxide semi-conductive material, theplurality of touch electrodes comprise a reductive plasma-treated metaloxide semi-conductive material.
 3. The array substrate of claim 2,wherein the metal oxide semi-conductive material comprises indiumgallium zinc oxide.
 4. The array substrate of claim 2, wherein theplurality of touch electrodes comprise a H₂ or NH₃ plasma-treated indiumgallium zinc oxide.
 5. The array substrate of claim 1, wherein theplurality of touch electrodes are operated in a time-division drivingmode.
 6. The array substrate of claim 1, wherein the plurality of touchelectrodes comprise a metal, and the active layer comprises an oxidativeplasma-treated metal material.
 7. The array substrate of claim 1,wherein the plurality of touch electrodes comprises a plurality rows offirst touch electrodes and a plurality of second touch electrodes, eachof the plurality rows of first touch electrodes extends substantiallyalong a first direction and comprises a plurality of first touchelectrodes spaced apart along the first direction; and each of theplurality of second touch electrodes extends substantially along asecond direction different from the first direction.
 8. The arraysubstrate of claim 7, further comprising: a first passivation layerabove the active layer; and a plurality of first touch electrodeconnection lines on a side of the first passivation layer distal to theactive layer, each of the plurality of first touch electrode connectionlines extends substantially along the first direction; wherein each ofthe plurality of first touch electrode connection lines is electricallyconnected to the plurality of first touch electrodes in one of theplurality rows of first touch electrodes through a plurality of thirdvias in the first passivation layer.
 9. An array substrate, comprising:an active layer; a plurality of touch electrodes in a same layer as theactive layer, the plurality of touch electrodes comprises a pluralityrows of first touch electrodes and a plurality of second touchelectrodes, each of the plurality rows of first touch electrodes extendssubstantially along a first direction and comprises a plurality of firsttouch electrodes spaced apart along the first direction; each of theplurality of second touch electrodes extends substantially along asecond direction different from the first direction; a first passivationlayer above the active layer; a second passivation layer on a side ofthe first passivation layer distal to the active layer; a pixelelectrode on a side of the second passivation layer distal to the activelayer; and a plurality of first touch electrode connection lines on aside of the first passivation layer distal to the active layer, each ofthe plurality of first touch electrode connection lines extendssubstantially along the first direction; wherein the active layercomprises a semi-conductive material, and the plurality of touchelectrodes comprise a conductive material, the conductive materialcomprises at least one element in common with the semi-conductivematerial; each of the plurality of first touch electrode connectionlines is electrically connected to the plurality of first touchelectrodes in one of the plurality rows of first touch electrodesthrough a plurality of third vias in the first passivation layer; andthe pixel electrode is electrically connected to a drain electrodethrough a fourth via in the first passivation layer and a fifth via inthe second passivation layer.
 10. The array substrate of claim 5,wherein the time-division driving mode comprises a display mode and atouch control mode; the plurality of touch electrodes are commonelectrodes for applying common voltage signal during the display mode;and the plurality of touch electrodes are touch control electrodes forconducting touch signals during the touch control mode.
 11. A displayapparatus comprising an array substrate of claim
 1. 12. A method offabricating an array substrate, comprising: forming an active layer anda plurality of touch electrodes in a same layer on a base substrate, theplurality of touch electrodes formed to detect a touch; forming a gateelectrode in a layer different from the active layer and the pluralityof touch electrode; forming a pixel electrode; forming a plurality oftouch electrode connection lines, each of which formed to beelectrically connected to one of the plurality of touch electrodes; andforming a passivation layer on a side of the active layer and theplurality of touch electrode distal to the base substrate; wherein theactive layer is formed to comprise a semi-conductive material, and theplurality of touch electrodes are formed to comprise a conductivematerial, the conductive material comprises at least one element incommon with the semi-conductive material; the active layer and theplurality of touch electrodes are formed so that an orthographicprojection of the active layer on the base substrate is substantiallynon-overlapping with orthographic projections of the plurality of touchelectrodes on the base substrate, and at least partially overlaps withan orthographic projection of the gate electrode on the base substrate;the gate electrode is formed so that the orthographic projection of thegate electrode on the base substrate is substantially non-overlappingwith the orthographic projections of the plurality of touch electrodeson the base substrate; and the active layer and the plurality of touchelectrodes are formed so that the active layer and the plurality oftouch electrodes are in direct contact with a same insulating layer,without any intermediate structure, on a same side of the sameinsulating layer facing the passivation layer.
 13. The method of claim12, wherein forming an active layer and a plurality of touch electrodescomprises: forming a semi-conductive material layer; etching thesemi-conductive material layer to form an etched semi-conductivematerial layer having a first part and a second part, the first partbeing the active layer; and treating the second part thereby forming theplurality of touch electrodes.
 14. The method of claim 13, wherein thesemi-conductive material comprises a metal oxide semi-conductivematerial, and treating the second part comprises treating the secondpart by a reductive plasma-treatment.
 15. The method of claim 14,wherein the semi-conductive material comprises indium gallium zincoxide; and treating the second part comprises treating the second partby a plasma treatment with H₂ or NH₃.
 16. The method of claim 12,wherein forming the plurality of touch electrodes comprises forming aplurality rows of first touch electrodes and a plurality of second touchelectrodes, each of the plurality rows of first touch electrodes formedto extend substantially along a first direction and comprise a pluralityof first touch electrodes spaced apart along the first direction; andeach of the plurality of second touch electrodes extends formed toextend substantially along a second direction different from the firstdirection.
 17. The method of claim 16, further comprising: forming afirst passivation layer above the active layer; forming a plurality ofthird vias in the first passivation layer; and forming a plurality offirst touch electrode connection lines on a side of the firstpassivation layer distal to the active layer; wherein each of theplurality of first touch electrode connection lines extendssubstantially along the first direction, and each of the plurality offirst touch electrode connection lines is electrically connected to theplurality of first touch electrodes in each of the plurality rows offirst touch electrodes through the plurality of third vias.
 18. Thearray substrate of claim 9, further comprising: a common electrode on aside of the pixel electrode distal to the active layer; a first commonelectrode connection line electrically connected to the commonelectrode, a second common electrode connection line electricallyconnected to the plurality rows of first touch electrodes, and a thirdcommon electrode connection line electrically connected to the pluralityof second touch electrodes; and a first switch in the second commonelectrode connection line and a second switch in the third commonelectrode connection line.
 19. The array substrate of claim 8, furthercomprising: an etch stop layer on a side of the active layer proximal tothe first passivation layer; and a source electrode and a drainelectrode on a side of the etch stop layer distal to the active layer;the source electrode electrically connected to the active layer througha first via in the etch stop layer, the drain electrode electricallyconnected to the active layer through a second via in the etch stoplayer.
 20. The array substrate of claim 8, wherein the pixel electrodeis electrically connected to a drain electrode of a thin filmtransistor; and wherein the plurality of first touch electrodeconnection lines are in a different layer from the pixel electrode.